• SI7370DP-T1-E3 Integrated Circuits ICs MOSFET N-CH 60V 9.6A PPAK SO-8
SI7370DP-T1-E3 Integrated Circuits ICs MOSFET N-CH 60V 9.6A PPAK SO-8

SI7370DP-T1-E3 Integrated Circuits ICs MOSFET N-CH 60V 9.6A PPAK SO-8

Product Details:

Model Number: SI7370DP-T1-E3

Payment & Shipping Terms:

Packaging Details: Tape & Reel (TR)
Delivery Time: 1-2 work days
Payment Terms: D/A, T/T, Western Union
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Detail Information

Drain To Source Voltage (Vdss): 60V Power Dissipation (Max): 1.9W (Ta)
Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount
Packaging: Tape & Reel (TR) Supplier Device Package: PowerPAK® SO-8

Product Description

We can supply SI7370DP-T1-E3, send us a request quote to request SI7370DP-T1-E3 pirce and lead time, https://www.henkochips.com a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SI7370DP-T1-E3.The price and lead time for SI7370DP-T1-E3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part SI7370DP-T1-E3.We look forward to working with you to establish long-term relations of cooperation

 

Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 60V 9.6A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
FET Type: N-Channel
Series: TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 9.6A (Ta)
Other Names: SI7370DP-T1-E3TR SI7370DPT1E3
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 11 mOhm @ 12A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
Operating Temperature: -55°C ~ 150°C (TJ)

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