• SQJA20EP-T1_GE3 Integrated Circuits ICs MOSFET N-CH 200V PWRPAK SO-8L
SQJA20EP-T1_GE3 Integrated Circuits ICs MOSFET N-CH 200V PWRPAK SO-8L

SQJA20EP-T1_GE3 Integrated Circuits ICs MOSFET N-CH 200V PWRPAK SO-8L

Product Details:

Model Number: SQJA20EP-T1_GE3

Payment & Shipping Terms:

Packaging Details: Tape & Reel (TR)
Delivery Time: 1-2 work days
Payment Terms: D/A, T/T, Western Union
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Detail Information

Drain To Source Voltage (Vdss): 200V Power Dissipation (Max): 68W (Tc)
Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount
Packaging: Tape & Reel (TR) Supplier Device Package: PowerPAK® SO-8

Product Description

We can supply SQJA20EP-T1_GE3, send us a request quote to request SQJA20EP-T1_GE3 pirce and lead time, https://www.henkochips.com a professional electronic components distributor. With 10+ Million line items of available electronic components can ship in short lead-time, over 250 thousand part numbers of electronic components in stock for immediately delivery, which may include part number SQJA20EP-T1_GE3.The price and lead time for SQJA20EP-T1_GE3 depending on the quantity required, availability and warehouse location.Contact us today and our sales representative will provide you price and delivery on Part SQJA20EP-T1_GE3.We look forward to working with you to establish long-term relations of cooperation

 

Vgs(th) (Max) @ Id: 3.5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 200V 22.5A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
FET Type: N-Channel
Series: Automotive, AEC-Q101, TrenchFET®
Current - Continuous Drain (Id) @ 25°C: 22.5A (Tc)
Other Names: SQJA20EP-T1_GE3TR
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 50 mOhm @ 10A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Operating Temperature: -55°C ~ 175°C (TJ)

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