• STB28N65M2 	Integrated Circuits ICs  MOSFET N-CH 650V 20A D2PAK
STB28N65M2 	Integrated Circuits ICs  MOSFET N-CH 650V 20A D2PAK

STB28N65M2 Integrated Circuits ICs MOSFET N-CH 650V 20A D2PAK

Product Details:

Model Number: STB28N65M2

Payment & Shipping Terms:

Packaging Details: Tape & Reel (TR)
Delivery Time: 1-2 work days
Payment Terms: D/A, T/T, Western Union
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Detail Information

Drain To Source Voltage (Vdss): 650V Power Dissipation (Max): 170W (Tc)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount
Packaging: Cut Tape (CT) Supplier Device Package: D2PAK

Product Description

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Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Detailed Description: N-Channel 650V 20A (Tc) 170W (Tc) Surface Mount D2PAK
FET Feature: -
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Manufacturer Standard Lead Time: 42 Weeks
FET Type: N-Channel
Series: MDmesh™ M2
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Other Names: 497-15456-1
Input Capacitance (Ciss) (Max) @ Vds: 1440pF @ 100V
Vgs (Max): ±25V
Rds On (Max) @ Id, Vgs: 180 mOhm @ 10A, 10V
Technology: MOSFET (Metal Oxide)
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V
Operating Temperature: 150°C (TJ)

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